? 2006 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 175 c 600 v v dgr t j = 25 c to 175 c; r gs = 1 m ? 600 v v gs continuous transient 30 v i d25 t c = 25 c10a i dm t c = 25 c, pulse width limited by t jm 30 a i ar t c = 25 c10a e ar t c = 25 c20mj e as t c = 25 c 500 mj dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 10 v/ns t j 150 c, r g = 10 ? p d t c = 25 c 200 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c t sold plastic body for 10 s 260 c m d mounting torque (to-220) 1.13/10 nm/lb.in. f c mounting force (leaded to-263) 10..65 / 2.5..15 n/lb. weight to-220 4 g to-263 types 3 g g = gate d = drain s = source tab = drain ds99330e(03/06) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0 v, i d = 250 a 600 v v gs(th) v ds = v gs , i d = 100 a 3.0 5.0 v i gss v gs = 30 v dc , v ds = 0 100 na i dss v ds = v dss 5 a v gs = 0 v t j = 125 c50 a r ds(on) v gs = 10 v, i d = 0.5 i d25 740 m ? pulse test, t 300 s, duty cycle d 2 % polarhv tm power mosfet n-channel enhancement mode avalanche rated features l international standard packages l unclamped inductive switching (uis) rated l low package inductance - easy to drive and to protect advantages l easy to mount l space savings l high power density ixta 10n60p ixti 10n60p ixtp 10n60p v dss = 600 v i d25 = 10 a r ds(on) 740 m ? ? ? ? ? to-220 (ixtp) d (tab) g s to-263 (ixta) g s g d s (tab) (tab) leaded to-263 (ixti)
ixys reserves the right to change limits, test conditions, and dimensions. ixta 10n60p ixti 10n60p ixtp 10n60p symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 0.5 i d25 , pulse test 6 11 s c iss 1610 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 165 pf c rss 14 pf t d(on) 20 ns t r v gs = 10 v, v ds = 0.5 v dss , i d =0.5 i d25 24 ns t d(off) r g = 10 ? (external) 55 ns t f 18 ns q g(on) 32 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 11 nc q gd 10 nc r thjc 0.62 c/w r thcs (to-220) 0.25 c/w (leaded to-263) 0.21 c/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 10 a i sm repetitive 30 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr i f = 9 a, -di/dt = 100 a/ s 500 ns v r = 100v leaded 263 (ixti) outline ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 to-263 (ixta) outline to-220 (ixtp) outline pins: 1 - gate 2 - drain 3 - source 4 - drain
? 2006 ixys all rights reserved fig. 2. extended output characteristics @ 25 o c 0 3 6 9 12 15 18 21 24 0 3 6 9 12 15 18 21 24 27 30 v d s - volts i d - amperes v gs = 10v 8v 7v 6v 5v fig. 3. output characteristics @ 125 o c 0 1 2 3 4 5 6 7 8 9 10 0 2 4 6 8 101214 v d s - volts i d - amperes v gs = 10v 7v 6v 5v fig. 1. output characteristics @ 25 o c 0 1 2 3 4 5 6 7 8 9 10 01234567 v d s - volts i d - amperes v gs = 10v 7v 6v 5v fig. 4. r ds(on ) norm alized to 0.5 i d25 value vs. junction temperature 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r d s ( o n ) - normalized i d = 10a i d = 5a v gs = 10v fig. 6. drain current vs. case temperature 0 1 2 3 4 5 6 7 8 9 10 11 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes fig. 5. r ds(on) norm alized to 0.5 i d25 value vs. i d 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 0 5 10 15 20 25 i d - amperes r d s ( o n ) - normalize d t j = 125 o c t j = 25 o c v gs = 10v ixta 10n60p ixti 10n60p ixtp 10n60p
ixys reserves the right to change limits, test conditions, and dimensions. ixta 10n60p ixti 10n60p ixtp 10n60p fig. 11. capacitance 10 100 1000 10000 0 5 10 15 20 25 30 35 40 v d s - volts capacitance - picofarads c iss c oss c rss f = 1mhz fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 5 10 15 20 25 30 35 q g - nanocoulombs v g s - volts v ds = 300v i d = 5a i g = 10ma fig. 7. input admittance 0 2 4 6 8 10 12 14 16 3.544.555.566.5 v g s - volts i d - amperes t j =125 o c 25 o c -40 o c fig. 8. transconductance 0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10 12 14 i d - amperes g f s - siemens t j = -40 o c 25 o c 125 o c fig. 9. source current vs. source-to-drain voltage 0 5 10 15 20 25 30 35 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 v s d - volts i s - amperes t j = 125 o c t j = 25 o c fig. 12. maxim um transient therm al resistance 0.01 0.10 1.00 0.01 0.1 1 10 100 1000 pulse width - milliseconds r ( t h ) j c - o c / w
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